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Cs encapsulation and interacting noise sources in carbon nanotubesSUNG WON KIM; TAE WOO UHM; YOUNG GYU YOU et al.Synthetic metals. 2014, Vol 197, pp 48-51, issn 0379-6779, 4 p.Article

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Random Telegraph Noise Effect on the Programmed Threshold-Voltage Distribution of Flash MemoriesMONZIO COMPAGNONI, Christian; GHIDOTTI, Michele; LACAITA, Andrea L et al.IEEE electron device letters. 2009, Vol 30, Num 9, pp 984-986, issn 0741-3106, 3 p.Article

Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate BiasWEI FENG; CHUN MENG DOU; NIWA, Masaaki et al.IEEE electron device letters. 2014, Vol 35, Num 1, pp 3-5, issn 0741-3106, 3 p.Article

Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation ModeCHO, Heung-Jae; SON, Younghwan; OH, Byoungchan et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 10, pp 2697-2703, issn 0018-9383, 7 p.Article

Low-Frequency Noise in MgO Magnetic Tunnel Junctions : Hooge's Parameter Dependence on Bias VoltageALMEIDA, J. M; WISNIOWSKI, P; FREITAS, P. P et al.IEEE transactions on magnetics. 2008, Vol 44, Num 11, pp 2569-2572, issn 0018-9464, 4 p., 1Conference Paper

Dependence on an oxide trap's location of random telegraph noise (RTN) in GIDL current of n-MOSFETQUAN NGUYEN GIA; YOO, Sung-Won; HYUNSEUL LEE et al.Solid-state electronics. 2014, Vol 92, pp 20-23, issn 0038-1101, 4 p.Article

Analysis of random telegraph noise observed in semiconducting carbon nanotube quantum dotsSUNG HO JHANG.Synthetic metals. 2014, Vol 198, pp 118-121, issn 0379-6779, 4 p.Article

Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETsADAMU-LEMA, Fikru; MONZIO COMPAGNONI, Christian; AMOROSO, Salvatore M et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 2, pp 833-839, issn 0018-9383, 7 p.Article

Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part I: Physical InvestigationCASTELLANI, Niccolò; MONZIO COMPAGNONI, Christian; MAURI, Aurelio et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 9, pp 2488-2494, issn 0018-9383, 7 p.Article

Performance Improvement of a Virtual-Ground Nonvolatile Charge-Trap Storage NOR-Type Memory Cell With Optimized Junction Dosage for 45-nm Generation NodeOU, T. F; TZENG, W. C; LU, W. P et al.IEEE electron device letters. 2011, Vol 32, Num 6, pp 734-736, issn 0741-3106, 3 p.Article

A New Methodology for Two-Level Random-Telegraph-Noise Identification and Statistical AnalysisCHIMENTON, Andrea; ZAMBELLI, Cristian; OLIVO, Piero et al.IEEE electron device letters. 2010, Vol 31, Num 6, pp 612-614, issn 0741-3106, 3 p.Article

Noise evidence for intermittent channeled vortex motion in laser-processed YBaCuO thin filmsJUKNA, Arturas; BARBOY, Ilan; JUNG, Grzegorz et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 66001C.1-66001C.6, issn 0277-786X, isbn 978-0-8194-6737-9, 1VolConference Paper

Analysis of Single-Trap-Induced Random Telegraph Noise and Its Interaction With Work Function Variation for Tunnel FETFAN, Ming-Long; HU, Vita Pi-Ho; CHEN, Yin-Nein et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 6, pp 2038-2044, issn 0018-9383, 7 p.Article

RTS noise characterization of HfO_x RRAM in high resistive statePUGLISI, Francesco M; PAVAN, Paolo; PADOVANI, Andrea et al.Solid-state electronics. 2013, Vol 84, pp 160-166, issn 0038-1101, 7 p.Conference Paper

Gate current random telegraph noise and single defect conductionKACZER, B; TOLEDANO-LUQUE, M; GOES, W et al.Microelectronic engineering. 2013, Vol 109, pp 123-125, issn 0167-9317, 3 p.Article

Impact of Discrete-Charge-Induced Variability on Scaled MOS Devices : Solid-State Circuit Design -Architecture, Circuit, Device and Design MethodologyTAKEUCHI, Kiyoshi.IEICE transactions on electronics. 2012, Vol 95, Num 4, pp 414-420, issn 0916-8524, 7 p.Article

Characterization of the Variable Retention Time in Dynamic Random Access MemoryKIM, Heesang; OH, Byoungchan; SON, Younghwan et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 9, pp 2952-2958, issn 0018-9383, 7 p.Article

Comparison of the Trap Behavior Between ZrO₂ and HfO₂ Gate Stack nMOSFETs by 1/f Noise and Random Telegraph NoiseBO CHIN WANG; SAN LEIN WU; PO CHIN HUANG et al.IEEE electron device letters. 2013, Vol 34, Num 2, pp 151-153, issn 0741-3106, 3 p.Article

Statistical Interactions of Multiple Oxide Traps Under BTI Stress of Nanoscale MOSFETsMARKOV, Stanislav; AMOROSO, Salvatore Maria; GERRER, Louis et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 686-688, issn 0741-3106, 3 p.Article

A Contact-Resistive Random-Access-Memory-Based True Random Number GeneratorHUANG, Chien-Yuan; WEN CHAO SHEN; TSENG, Yuan-Heng et al.IEEE electron device letters. 2012, Vol 33, Num 8, pp 1108-1110, issn 0741-3106, 3 p.Article

Analysis of Random Telegraph Noise in 45-nm CMOS Using On-Chip Characterization SystemREALOV, Simeon; SHEPARD, Kenneth L.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 5, pp 1716-1722, issn 0018-9383, 7 p.Article

Modeling the Impact of Reset Depth on Vacancy-Induced Filament Perturbations in HfO₂ RRAMRAGHAVAN, Nagarajan; DEGRAEVE, Robin; FANTINI, Andrea et al.IEEE electron device letters. 2013, Vol 34, Num 5, pp 614-616, issn 0741-3106, 3 p.Article

Correlation Between Random Telegraph Noise and 1/f Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/DrainBO CHIN WANG; SAN LEIN WU; CHIEN WEI HUANG et al.IEEE electron device letters. 2012, Vol 33, Num 7, pp 928-930, issn 0741-3106, 3 p.Article